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| PTF 10125 135 Watts, 1.4-1.6 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * * * * * * INTERNALLY MATCHED Performance at 1.5 GHz, 28 V - Output Power = 135 Watts Min - Power Gain = 12.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 200 180 Output Power (Watts) 160 140 120 100 80 60 40 20 0 0 3 6 9 12 15 A-12 101 3456 25 9 VDD = 28 V IDQ = 1.3 A Total f = 1500 MHz 935 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.3 A Total, f = 1.50, 1.55 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.3 A Total, f = 1.50, 1.55 GHz) Drain Efficiency (VDD = 28 V, POUT = 135 W, IDQ = 1.3 A Total, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 67.5 W, IDQ = 1.3 A Total, f = 1.5 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps Min 11.5 Typ 12.5 Max -- Units dB P-1dB hD Y 135 35 -- 150 40 -- -- -- 10:1 Watts % -- e 1 PTF 10125 Electrical Characteristics Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested--characteristics, conditions and limits shown per side) Min 65 -- 3.0 2.0 Typ -- -- -- 4.0 Max -- 5.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 6 A Maximum Ratings Parameter Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) (1)per side Symbol VDSS VGS TJ PD TSTG RqJC Value 65 20 200 440 2.51 -40 to +150 0.39 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Broadband Test Fixture Performance 16 50 Efficiency (%) 14 40 Gain 30 16 150 Gain (dB) Gain (dB) VDD = 28 V 15 14 13 Efficiency (%) 12 1400 1450 1500 1550 30 1600 Output Power & Efficiency 17 180 IDQ = 1.3 A Total Gain (dB) 120 90 60 12 10 8 VDD = 28 V IDQ = 1.3 A Total Return Loss (dB) POUT = 135 W -15 10 -20 0 1550 6 1450 1475 1500 1525 Frequency (MHz) Frequency (MHz) 2 Return Loss 20 -10 Efficiency e Power Gain vs. Output Power 14 13 200 PTF 10125 Output Power (P-1dB) vs. Supply Voltage Output Power (Watts) IDQ = 1300 mA Power Gain (dB) IDQ = 650 mA 12 11 10 9 10 100 IDQ = 325 mA VDD = 28 V f = 1500 MHz 180 160 140 120 100 IDQ = 1.3 A Total f = 1500 MHz 1000 24 26 28 30 32 Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) -10 -20 3rd Order 5th 7th Capacitance vs. Supply Voltage (per side) * 250 10 Cds and Cgs (pF) VDD = 28 V, IDQ = 1.3 A Total f1 = 1500.0 MHz, f2 = 1500.1 MHz 200 150 VGS = 0 V f = 1 MHz 8 6 IMD (dBc) -30 -40 -50 -60 Cgs 100 50 0 4 Cds Crss 0 10 20 30 40 2 0 -70 0 50 100 150 200 Output Power (Watts-PEP) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Peak Power Gain for DAB Applications @ 10% Pulsed Input Signal 14 Bias Voltage vs. Temperature 1.03 1.02 Voltage normalized to 1.0 V Series show current (A) 0.6 1.74 2.88 4.02 5.16 6.3 Peak Power Gain (dB) 12 10 8 6 4 2 0 0 10 20 30 40 50 60 10% Pulse Conditions f = 20 KHz Pulse Width = 5 us VDD = 28 V IDQ = 1.3 A Total f = 1500 MHz Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130 Average Output Power (Watts) 10 dB Peak to Average 3 Crss (pF) PTF 10125 Impedance Data RAT O e Z Source D Z Load D GHz 1400 1450 1500 1550 1600 R 2.85 4.16 4.58 4.02 3.41 jX -4.23 -4.36 -3.30 -0.83 0.37 R 2.60 2.36 2.04 1.63 1.27 jX -2.46 -2.53 -2.48 -2.52 -2.08 Z Load 1.6 GHz 1.4 GHz 0.1 4 W AV <--- E W ARD LOAD T HS TO L E NG Frequency Z Source W Z Load W 0.0 1.4 GHz 0.1 0.1 G G S - WAVE LE NGTH S T OW A RD GE N E (VDD = 28 V, POUT = 135 W, IDQ = 1.3 A Total) Z0 = 50 W Z Source 1.6 GHz e Test Circuit PTF 10125 Test Circuit Block Diagram for f = 1.5 GHz Q1 l1, l2 l3, l4 l5, l6 l7, l8 l9, l10 l11, l12 PTF 10125 .25 l @ 1.5 GHz .08 l @ 1.5 GHz .138 l @ 1.5 GHz .096 l @ 1.5 GHz .045 l @ 1.5 GHz LDMOS RF Transistor Microstrip 50 W Microstrip 70 W Microstrip 80 W Microstrip 9.5 W Microstrip 7.7 W Microstrip 7.7 W L1, L2 L3, L4 R1, R2, R3, R4 R5, R6 R7, R8 R9, R10 T1, T2 Circuit Board 2.7 nh SMT Coil 4 mm SMT Ferrite Bead 220 W Chip Resistor 2K SMT Potentiometer 10 W Chip Resistor 1 W Chip Resistor 50 W Coaxial Balun K1206 K1206 K1206 C1, C2, C3, C4, C7, C8, C11, C12 13 pF Chip Cap ATC 100 B C5, C6, C15, C16 0.1 mF Chip Cap K1206 C9, C10, C13, C14 10 mF SMT Tantalum Cap C17, C19 2.0 pF Chip Cap ATC 100 B C18 0.3 pF Chip Cap ATC 100 B .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper 5 PTF 10125 e Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com\rfpower Specifications subject to change without notice. L3 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10125 Uen Rev. A 12-01-99 6 |
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